Product Description
The PNP Bipolar Power Transistor is a high-performance 140V, 12A through-hole semiconductor designed for demanding power switching and amplification applications. Built in a rugged TO-3PN (TO-3P-3 / SC-65-3) package, this transistor delivers up to 120 watts of power dissipation, making it an excellent choice for professional audio equipment, power supplies, industrial electronics, motor control systems, and electronic repairs.
With a transition frequency of 15 MHz, the device provides fast switching performance while maintaining excellent current handling capabilities. Its minimum DC current gain (hFE) of 35 ensures efficient amplification, while the low collector-emitter saturation voltage helps improve overall circuit efficiency.
Designed for reliability, this transistor features a wide operating temperature range of -55°C to +150°C, making it suitable for harsh industrial environments and high-power applications where dependable operation is essential.
Features
- High-power PNP bipolar junction transistor (BJT)
- 140V collector-emitter breakdown voltage
- 12A maximum collector current
- 120W maximum power dissipation
- TO-3PN (TO-3P-3 / SC-65-3) through-hole package
- 15 MHz transition frequency
- Minimum DC current gain (hFE): 35
- Low collector-emitter saturation voltage
- Wide operating temperature range
- Ideal for power amplification and switching applications
Applications
- Professional Audio Amplifiers
- Power Supply Circuits
- Industrial Electronics
- Motor Control Systems
- Inverters
- High-Power Switching Circuits
- Electronic Equipment Repair
- DIY Electronics Projects
- Test Equipment
- General Power Electronics
Specifications
General
- Product Type: Bipolar Junction Transistor (BJT)
- Transistor Polarity: PNP
- Package: TO-3PN (TO-3P-3 / SC-65-3)
- Mounting Style: Through Hole
Electrical
- Collector-Emitter Breakdown Voltage (VCEO): 140V
- Maximum Collector Current (IC): 12A
- Maximum Power Dissipation: 120W
- Transition Frequency (fT): 15 MHz
- DC Current Gain (hFE): 35 Minimum @ IC = 5A, VCE = 5V
- Collector Cutoff Current (ICBO): 100 µA Maximum
- Collector-Emitter Saturation Voltage (VCE(sat)): 2V Maximum @ IB = 0.5A, IC = 5A
Environmental
- Operating Junction Temperature: -55°C to +150°C
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