Product Description
The Infineon IRF1010EPBF is a high-performance N-channel enhancement-mode power MOSFET designed for demanding switching and power management applications. Featuring a 60V drain-to-source breakdown voltage, 84A continuous drain current capability, and ultra-low 12mΩ on-resistance, this device delivers excellent efficiency and reliable operation in high-current circuits.
Housed in a rugged TO-220-3 through-hole package, the IRF1010EPBF is ideal for power supplies, motor control systems, DC-DC converters, battery-powered equipment, inverters, and industrial switching applications. Its low on-resistance minimizes conduction losses while the high current handling capability supports demanding loads with reduced heat generation.
Designed using advanced silicon technology, the IRF1010EPBF offers fast switching performance, excellent thermal characteristics, and a maximum junction temperature of 175°C, making it suitable for both commercial and industrial electronic designs.
Features
- N-channel enhancement-mode MOSFET
- 60V drain-to-source breakdown voltage
- 84A continuous drain current
- Ultra-low 12mΩ RDS(on)
- TO-220-3 through-hole package
- High power dissipation capability
- Fast switching performance
- Low conduction losses
- High-temperature operation up to 175°C
- Suitable for power management and switching applications
- Rugged silicon construction
- Single-channel configuration
Applications
- Switching Power Supplies
- DC-DC Converters
- Motor Control Circuits
- Battery Management Systems
- Power Inverters
- Industrial Controls
- Automotive Electronics
- Solar Power Systems
- UPS Systems
- High-Current Switching Circuits
- Audio Amplifier Power Stages
- Electronic Load Controllers
Specifications
General
- Manufacturer: Infineon Technologies
- Part Number: IRF1010EPBF
- Product Type: Power MOSFET
- Technology: Silicon (Si)
- Configuration: Single
- Channel Count: 1
Electrical Specifications
- Transistor Polarity: N-Channel
- Channel Mode: Enhancement
- Drain-Source Breakdown Voltage (VDS): 60V
- Continuous Drain Current (ID): 84A
- Drain-Source On Resistance (RDS(on)): 12mΩ
- Gate-Source Voltage (VGS): ±20V
- Gate Threshold Voltage (VGS(th)): 3V
- Gate Charge (Qg): 130nC
- Power Dissipation (PD): 200W
Thermal Specifications
- Minimum Operating Temperature: -55°C (-67°F)
- Maximum Operating Temperature: 175°C (347°F)
Package Information
- Package Type: TO-220-3
- Mounting Style: Through Hole
Physical Information
- Unit Weight: 0.0688 oz
- Unit Weight: 1.95 g
Compliance
- RoHS Compliant
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