Product Description
The Infineon IRF530NSTRLPBF is a high-performance N-channel enhancement-mode power MOSFET designed for efficient power switching and control applications. Featuring a 100V drain-to-source breakdown voltage and 17A continuous drain current capability, this device provides reliable operation in power supplies, motor controls, industrial electronics, and DC switching circuits.
Packaged in a compact D2PAK (TO-263-3) surface-mount package, the IRF530NSTRLPBF is ideal for automated PCB assembly while delivering excellent thermal and electrical performance. Its low 90mΩ drain-source on-resistance helps reduce conduction losses and improve system efficiency.
Built using advanced silicon technology, this MOSFET offers fast switching characteristics with low gate charge, quick rise and fall times, and operation up to 175°C junction temperature. These features make it an excellent choice for high-efficiency switching power supplies, battery-powered systems, and industrial control applications.
Features
- N-channel enhancement-mode MOSFET
- 100V drain-to-source breakdown voltage
- 17A continuous drain current
- Low 90mΩ RDS(on)
- D2PAK (TO-263-3) surface-mount package
- Fast switching performance
- Low gate charge design
- High-temperature operation up to 175°C
- Suitable for automated SMT assembly
- Excellent efficiency for power switching applications
- Single-channel configuration
- RoHS compliant
Applications
- Switching Power Supplies
- DC-DC Converters
- Motor Drivers
- Battery Management Systems
- Industrial Automation Equipment
- Power Distribution Circuits
- LED Drivers
- Solar Power Systems
- Inverters
- Automotive Electronics
- Electronic Switching Systems
- General Power Control Applications
Specifications
General
- Manufacturer: Infineon Technologies
- Part Number: IRF530NSTRLPBF
- Product Type: Power MOSFET
- Technology: Silicon (Si)
- Configuration: Single
- Number of Channels: 1
Electrical Specifications
- Transistor Polarity: N-Channel
- Channel Mode: Enhancement
- Drain-Source Breakdown Voltage (VDS): 100V
- Continuous Drain Current (ID): 17A
- Drain-Source On Resistance (RDS(on)): 90mΩ
- Gate-Source Voltage (VGS): ±20V
- Gate Threshold Voltage (VGS(th)): 4V
- Gate Charge (Qg): 37nC
- Forward Transconductance (Min): 12S
- Power Dissipation (PD): 3.8W
Switching Characteristics
- Typical Turn-On Delay Time: 9.2ns
- Typical Turn-Off Delay Time: 35ns
- Rise Time: 22ns
- Fall Time: 25ns
Thermal Specifications
- Minimum Operating Temperature: -55°C (-67°F)
- Maximum Operating Temperature: 175°C (347°F)
Package Information
- Package Type: D2PAK-3 (TO-263-3)
- Mounting Style: Surface Mount (SMD/SMT)
Physical Information
- Unit Weight: 0.0116 oz
- Unit Weight: 0.33 g
Packaging Options
- Reel
- Cut Tape
- MouseReel
Compliance
- RoHS Compliant
Search Terms: IRF530NSTRLPBF, Infineon IRF530NSTRLPBF, N-channel MOSFET, 100V MOSFET, D2PAK MOSFET, TO-263 MOSFET, surface mount MOSFET, power MOSFET transistor, Infineon power transistor, SMD MOSFET, switching MOSFET, enhancement mode MOSFET, 17A MOSFET, industrial MOSFET, high voltage MOSFET
