Product Description
The Infineon IRS2184STRPBF is a high-performance half-bridge gate driver IC designed to drive N-channel MOSFETs and IGBTs in high-voltage switching applications. Featuring a 600V high-side floating channel, this non-inverting gate driver delivers fast switching performance with excellent noise immunity, making it ideal for switch-mode power supplies, motor drives, inverters, UPS systems, induction heating equipment, and Class-D audio amplifiers.
Designed with a synchronous half-bridge configuration, the IRS2184STRPBF provides reliable high-side and low-side gate drive capability with peak output currents of 1.9A source and 2.3A sink. Its compact SOIC-8 surface-mount package allows for easy integration into modern PCB designs while offering dependable operation across an extended industrial temperature range.
Manufactured by Infineon Technologies, the IRS2184STRPBF is widely used in professional power electronics where efficient, high-speed switching and dependable gate control are essential.
Features
- Genuine Infineon Technologies component
- Half-bridge gate driver IC
- Non-inverting input configuration
- Drives N-channel MOSFETs and IGBTs
- High-side floating channel up to 600V
- Peak output current: 1.9A source / 2.3A sink
- Operating supply voltage: 10V to 20V
- Fast switching performance
- Typical rise time: 40ns
- Typical fall time: 20ns
- Low logic threshold compatible with standard logic levels
- Surface-mount SOIC-8 package
- Wide operating temperature range
Applications
- Switching Power Supplies (SMPS)
- Class-D Audio Amplifiers
- Motor Drive Circuits
- Industrial Inverters
- UPS Systems
- DC-AC Power Inverters
- Induction Heating Equipment
- Battery Chargers
- Renewable Energy Systems
- General Power Electronics
Specifications
General
- Manufacturer: Infineon Technologies
- Part Number: IRS2184STRPBF
- Product Type: Half-Bridge Gate Driver IC
- Base Part Number: IRS2184
Electrical
- Driver Configuration: Half-Bridge
- Number of Drivers: 2
- Input Type: Non-Inverting
- Gate Type: N-Channel MOSFET / IGBT
- Supply Voltage: 10V to 20V
- High-Side Bootstrap Voltage: 600V
- Peak Source Current: 1.9A
- Peak Sink Current: 2.3A
- Logic Low (VIL): 0.8V
- Logic High (VIH): 2.5V
- Typical Rise Time: 40ns
- Typical Fall Time: 20ns
Mechanical
- Mounting Style: Surface Mount (SMD/SMT)
- Package: SOIC-8
- Package Dimensions: 8-SOIC (0.154" / 3.90mm Width)
Environmental
- Operating Junction Temperature: -40°C to +150°C
- Operating Temperature: -40°F to +302°F (-40°C to +150°C)
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