Product Description
This 650V N-Channel MOSFET is a high-performance power transistor designed for demanding switching and amplification applications. Built using metal-oxide semiconductor (MOSFET) technology, it delivers efficient power handling, low on-resistance, and reliable thermal performance—making it ideal for use in power supplies, amplifiers, inverters, and high-voltage switching circuits.
With a continuous drain current of 35A and a maximum power dissipation of 210W, this device is engineered for high-efficiency operation in professional and industrial environments. The low Rds(on) of 78 mΩ ensures reduced conduction losses, while a 650V drain-to-source voltage rating provides excellent headroom for high-voltage designs.
Its optimized gate characteristics, including a gate charge of 91 nC and ±25V gate-source voltage tolerance, allow for stable and responsive switching performance. Combined with a high operating junction temperature of up to 150°C, this MOSFET is suitable for robust, long-term operation in high-demand systems.
Features
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N-Channel MOSFET design for efficient switching
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High voltage rating: 650V drain-to-source
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High current capability: 35A continuous drain current
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Low Rds(on): 78 mΩ @ 10V for improved efficiency
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High power dissipation: up to 210W (Tc)
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Fast switching performance with optimized gate charge
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Wide operating temperature range up to 150°C
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Suitable for power supplies, amplifiers, inverters, and industrial electronics
Specifications
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (Vdss):
650 V
Continuous Drain Current (Id @ 25°C):
35 A (Tc)
Drive Voltage (Max Rds On / Min Rds On):
10 V
Rds On (Max) @ Id, Vgs:
78 mΩ @ 19.5 A, 10 V
Gate Threshold Voltage (Vgs(th) Max):
5 V @ 250 µA
Gate Charge (Qg Max):
91 nC @ 10 V
Gate-Source Voltage (Max):
±25 V
Input Capacitance (Ciss Max):
3375 pF @ 100 V
Power Dissipation (Max):
210 W (Tc)
Operating Temperature (Junction):
Up to 150°C (302°F)
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