Product Description
The STP36NF06L N-Channel Power MOSFET (60V, 30A) is a high-performance silicon-based transistor designed for efficient power switching and amplification in a wide range of electronic applications. Featuring low Rds(on) and fast switching characteristics, this MOSFET is ideal for power supplies, motor control circuits, audio amplifiers, and DC-DC converters.
With a 60V drain-source breakdown voltage and 30A continuous drain current, the STP36NF06L delivers reliable performance in demanding environments. Its enhancement-mode design and low gate charge ensure efficient operation with minimal power loss. Built to withstand harsh conditions, it operates across a wide temperature range from -55°C to +175°C.
Features
- N-Channel enhancement-mode power MOSFET
- 60V Drain-Source Voltage (Vds)
- 30A Continuous Drain Current (Id)
- Low Rds(on): 40 mΩ for efficient performance
- Fast switching speeds (low rise/fall times)
- Low gate charge (13 nC) for efficient drive
- High power dissipation: 70W
- Through-hole mounting for secure PCB installation
- Wide operating temperature range: -55°C to +175°C
- AEC-Q100 qualified for reliability
Specifications
Electrical Characteristics
- Transistor Type: N-Channel Power MOSFET
- Configuration: Single
- Technology: Silicon (Si)
- Channel Mode: Enhancement
Voltage & Current
- Vds (Drain-Source Voltage): 60V
- Id (Continuous Drain Current): 30A
- Vgs (Gate-Source Voltage): ±18V
- Vgs(th) (Threshold Voltage): 1V
Performance
- Rds(on): 40 mΩ
- Gate Charge (Qg): 13 nC
- Power Dissipation (Pd): 70W
- Forward Transconductance: 15 S
Switching Characteristics
- Turn-On Delay Time: 10 ns
- Turn-Off Delay Time: 19 ns
- Rise Time: 80 ns
- Fall Time: 13 ns
Thermal & Physical
- Operating Temperature: -55°C to +175°C
- Mounting Style: Through Hole
- Package Type: (Typical TO-220)
- Unit Weight: 0.068784 oz
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