Product Description
The FQP27P06 P-Channel QFET MOSFET (60V, 27A) is a high-power transistor optimized for efficient switching and amplification in demanding electronic applications. Designed with enhancement-mode P-channel operation and advanced silicon technology, this MOSFET offers low on-resistance and high-current handling, making it ideal for power management, DC-DC converters, motor control, and audio circuits.
With a continuous drain current of 27A and drain-source voltage of 60V, the FQP27P06 delivers reliable and robust performance. Its TO-220 through-hole package ensures secure PCB mounting and excellent heat dissipation. QFET technology enhances switching efficiency while maintaining thermal stability under high loads.
Features
- P-Channel enhancement-mode MOSFET
- 60V Drain-Source Voltage (Vds)
- 27A Continuous Drain Current (Id)
- QFET technology for fast, efficient switching
- Low Rds(on): 70 mΩ for reduced power loss
- High power dissipation: 120W
- Wide operating temperature range: -55°C to +175°C
- Through-hole TO-220 package for secure mounting
- Single-channel configuration for simplified circuit integration
Specifications
Electrical Characteristics
- Transistor Type: P-Channel Power MOSFET
- Configuration: Single
- Technology: Silicon (Si)
- Channel Mode: Enhancement
Voltage & Current
- Vds (Drain-Source Voltage): 60V
- Id (Continuous Drain Current): 27A
- Vgs (Gate-Source Voltage): ±25V
- Vgs(th) (Threshold Voltage): 4V
Performance
- Rds(on): 70 mΩ
- Gate Charge (Qg): 43 nC
- Power Dissipation (Pd): 120W
- Forward Transconductance: 12.4 S
Switching Characteristics
- Turn-On Delay Time: 18 ns
- Turn-Off Delay Time: 30 ns
- Rise Time: 185 ns
- Fall Time: 90 ns
Thermal & Physical
- Operating Temperature: -55°C to +175°C
- Mounting Style: Through Hole
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