Product Description
The FQP17P06 P-Channel QFET MOSFET (60V, 17A) is a high-performance power transistor designed for efficient switching and amplification in a wide range of electronic applications. Built using advanced silicon technology, this enhancement-mode P-channel MOSFET delivers reliable performance with low on-resistance and fast switching speeds.
With a 60V drain-source breakdown voltage and 17A continuous drain current, the FQP17P06 is ideal for power management circuits, DC-DC converters, motor control, and audio systems. Its QFET technology ensures optimized efficiency and thermal performance, while the through-hole design allows for secure and easy PCB mounting.
Features
- P-Channel enhancement-mode MOSFET
- 60V Drain-Source Voltage (Vds)
- 17A Continuous Drain Current (Id)
- QFET technology for improved efficiency
- Rds(on): 120 mΩ for stable operation
- Fast switching performance
- High power dissipation: 79W
- Wide operating temperature range: -55°C to +175°C
- Through-hole mounting for durability and ease of installation
Specifications
Electrical Characteristics
- Transistor Type: P-Channel Power MOSFET
- Configuration: Single
- Technology: Silicon (Si)
- Channel Mode: Enhancement
Voltage & Current
- Vds (Drain-Source Voltage): 60V
- Id (Continuous Drain Current): 17A
- Vgs (Gate-Source Voltage): ±25V
- Vgs(th) (Threshold Voltage): 4V
Performance
- Rds(on): 120 mΩ
- Gate Charge (Qg): 27 nC
- Power Dissipation (Pd): 79W
- Forward Transconductance: 9.3 S
Switching Characteristics
- Turn-On Delay Time: 13 ns
- Turn-Off Delay Time: 22 ns
- Rise Time: 100 ns
- Fall Time: 60 ns
Thermal & Physical
- Operating Temperature: -55°C to +175°C
- Mounting Style: Through Hole
- Package Type: (Typical TO-220)
Search Terms: FQP17P06 MOSFET, P-channel MOSFET 60V 17A, QFET transistor FQP17P06, power MOSFET through hole, P-channel power transistor, FQP17P06 specs, MOSFET 60V P channel, transistor potencia canal P
