Product Description
The IKW30N60T Low Loss DuoPack IGBT (600V, 30A) is a high-performance power transistor designed for efficient switching in demanding industrial and electronic applications. Built using advanced silicon (Si) technology, this IGBT offers low conduction and switching losses, making it ideal for power supplies, inverters, motor drives, and induction heating systems.
Housed in a TO-247 package, the IKW30N60T supports high current handling and excellent thermal performance. With a collector-emitter voltage of 600V and continuous collector current up to 60A, it delivers reliable operation under high-load conditions. Its low saturation voltage and high power dissipation capability ensure efficient performance and reduced heat generation.
Features
- Low-loss DuoPack IGBT for efficient switching
- 600V Collector-Emitter Voltage (VCEO)
- 30A nominal / up to 60A continuous collector current
- Low VCE(sat): 1.5V for reduced conduction losses
- High power dissipation: 187W
- TO-247 package for superior thermal performance
- Wide operating temperature range: -40°C to +175°C
- Suitable for high-frequency and high-efficiency applications
- Through-hole mounting for secure installation
Specifications
Electrical Characteristics
- Product Type: IGBT (Insulated Gate Bipolar Transistor)
- Configuration: Single
- Technology: Silicon (Si)
Voltage & Current
- Collector-Emitter Voltage (VCEO Max): 600V
- Continuous Collector Current (Ic @ 25°C): 45A
- Maximum Collector Current (Ic Max): 60A
- Gate-Emitter Voltage (VGE): ±20V
- Collector-Emitter Saturation Voltage: 1.5V
Performance
- Power Dissipation (Pd): 187W
- Gate-Emitter Leakage Current: 100 nA
Thermal & Physical
- Operating Temperature: -40°C to +175°C
- Mounting Style: Through Hole
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